ZHCSBM6A September 2013 – January 2018 CSD13202Q2
PRODUCTION DATA.
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 μA | 12 | V | |||
| IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 9.6 V | 1 | μA | |||
| IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = 8 V | 100 | nA | |||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = 250 μA | 0.58 | 0.80 | 1.10 | V | |
| RDS(on) | Drain-to-source on-resistance | VGS = 2.5 V, IDS = 5 A | 9.1 | 11.6 | mΩ | ||
| VGS = 3 V, IDS = 5 A | 8.4 | 10.4 | |||||
| VGS = 4.5 V, IDS = 5 A | 7.5 | 9.3 | |||||
| gfs | Transconductance | VDS = 6 V, IDS = 5 A | 44 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| CISS | Input capacitance | VGS = 0V, VDS = 6 V, f = 1 MHz | 767 | 997 | pF | ||
| COSS | Output capacitance | 506 | 657 | pF | |||
| CRSS | Reverse transfer capacitance | 43 | 56 | pF | |||
| Rg | Series gate resistance | 0.7 | 1.4 | Ω | |||
| Qg | Gate charge total (4.5 V) | VDS = 6 V, IDS = 5 A | 5.1 | 6.6 | nC | ||
| Qgd | Gate charge gate-to-drain | 0.76 | nC | ||||
| Qgs | Gate charge gate-to-source | 0.98 | nC | ||||
| Qg(th) | Gate charge at Vth | 0.57 | nC | ||||
| QOSS | Output charge | VDS = 6 V, VGS = 0 V | 5.7 | nC | |||
| td(on) | Turnon delay time | VDS = 6 V, VGS = 4.5 V, IDS = 5 A RG = 2 Ω |
4.5 | ns | |||
| tr | Rise time | 28 | ns | ||||
| td(off) | Turnoff delay time | 11.0 | ns | ||||
| tf | Fall time | 13.6 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | IDS = 5 A, VGS = 0 V | 0.75 | 1 | V | ||
| Qrr | Reverse recovery charge | VDD = 6 V, IF = 5 A, di/dt = 200 A/μs | 13 | nC | |||
| trr | Reverse recovery time | 28 | ns | ||||